General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
â 10.8 A, 40 V. RDS(ON) = 12 mW @ VGS = 10 V
â Low gate charge (29 nC)
â High performance trench technology for extremely low RDS(ON)
â High power and current handling capability
Applications
â DC/DC converter
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