General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V).

Features
■–8.2 A, –40 V RDS(ON)= 0.027 Ω@ VGS= –10 V
                     RDS(ON)= 0.035 Ω@ VGS= –4.5 V
■Fast switching speed
■High performance trench technology for extremely lowRDS(ON)
■High power and current handling capability