General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

Features
„ rDS(ON) = 10mΩ, VGS = 10V, ID = 12A
„ rDS(ON) = 14mΩ, VGS = 6V, ID = 10A
„ High performance trench technology for extremely low rDS(ON)
„ Low gate charge
„ High power and current handling capability

Applications
„ DC/DC converters