General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Features
â rDS(ON) = 21mâ¦, VGS = 10V, ID = 7.5A
â rDS(ON) = 26.5mâ¦, VGS = 4.5V, ID = 6.7A
â High performance trench technology for extremely low rDS(ON)
â Low gate charge
â High power and current handling capability
Applications
â DC/DC converters
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