General Description
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features
• 7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V RDS(on) = 0.033 Ω @ VGS = 6 V.
• Low gate charge (23nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON).
• High power and current handling capability.

Applications
• DC/DC converter
• Motor drives