General Description
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 8V).
   
Features
• –10 A, –20 V. RDS(ON) = 13 mW @ VGS = –4.5 V
                         RDS(ON) = 17 mW @ VGS = –2.5 V
• Low gate charge
• High performance trench technology for extremely
    low RDS(ON)
• High current and power handling capability
   
Applications
• Power management
• Load switch
• Battery protection