General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
â 14.5 A, 30 V.
RDS(ON) = 7 mW @ VGS = 10 V
RDS(ON) = 8 mW @ VGS = 4.5 V
â High performance trench technology for extremely low RDS(ON)
â Low gate charge (45 nC typ)
â High power and current handling capability
|