General Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductorâs advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
⢠9.4 A, 20 V
RDS(ON) = 14 mΩ @ VGS = 4.5 V
RDS(ON) = 18 mΩ @ VGS = 2.5 V
⢠Low gate charge (16 nC typical)
⢠ESD protection diode (note 3)
⢠High performance trench technology for extremely low RDS(ON)
⢠High power and current handling capability
⢠Qualified to AEC Q101
⢠RoHS Compliant
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