General Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
· 3.5 A, 30 V. RDS(ON) = 90 mW @ VGS = 10 V
RDS(ON) = 140 mW @ VGS = 4.5 V
· Low gate charge (2.1 nC typical)
· ESD protection diode (note 3)
· High performance trench technology for extremely low RDS(ON)
· High power and current handling capability
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