General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Features
• 3.8A, 200V, RDS(on)= 1.2â¦@VGS= 10 V
• Low gate charge ( typical 4.8 nC)
• Low Crss ( typical 6.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct operation from logic drivers
• RoHS Compliant
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