MFG CO.
Fairchild Semiconductor
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductorâs proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
Features
⢠9.5 A, 200 V, RDS(on)= 360 mâ¦(Max.) @ VGS= 10 V, ID= 4.75 A
⢠Low Gate Charge (Typ. 20 nC)
⢠Low Crss (Typ. 40.5 pF)
⢠100% Avalanche Tested
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PDF
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