General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchildâs proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Features
⢠4A, 900V, RDS(on) = 4.2⦠@VGS = 10 V
⢠Low gate charge ( typical 17nC)
⢠Low Crss ( typical 5.6 pF)
⢠Fast switching
⢠100% avalanche tested
⢠Improved dv/dt capability
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