Description
This N-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s proprietary planar stripe, DMOS technology.
Features
• 6.8 A, 200 V, RDS(on)= 0.36 â¦(Max.) @ VGS= 10 V
• Low Gate Charge (Typ. 13.5 nC)
• Low Crss (Typ. 13 pF)
• 100% Avalanche Tested
• Improved dv/dt capability
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