General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchildâs proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for electronic lamp ballasts based on the complementary half bridge topology.
Features
⢠-1.03A, -500V, RDS(on) = 10.5⦠@VGS = -10 V
⢠Low gate charge ( typical 11 nC)
⢠Low Crss ( typical 6.0 pF)
⢠Fast switching
⢠100% avalanche tested
⢠Improved dv/dt capability
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