General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchildâs proprietary, planar stripe, DMOS technology.
Features
⢠2.8A, 200V, RDS(on) = 1.4⦠@VGS = 10 V
⢠Low gate charge ( typical 5.0 nC)
⢠Low Crss ( typical 5.0 pF)
⢠Fast switching
⢠100% avalanche tested
⢠Improved dv/dt capability
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