General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchildâs proprietary,
planar stripe, DMOS technology.
Features
⢠32.6A, 60V, RDS(on)= 0.021â¦@VGS= 10 V
⢠Low gate charge ( typical 24.5 nC)
⢠Low Crss ( typical 90 pF)
⢠Fast switching
⢠100% avalanche tested
⢠Improved dv/dt capability
⢠175°C maximum junction temperature rating
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