General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchildâs proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
Features
⢠44A, 80V, RDS(on) = 0.016⦠@VGS = 10 V
⢠Low gate charge ( typical 84 nC)
⢠Low Crss ( typical 200 pF)
⢠Fast switching
⢠100% avalanche tested
⢠Improved dv/dt capability
⢠175°C maximum junction temperature rating
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