Description
This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
â Advanced Process Technology
â Ultra Low On-Resistance
â Dynamic dv/dt Rating
â 175°C Operating Temperature
â Fast Switching
â Repetitive Avalanche Allowed up to Tjmax
â Lead-Free
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