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IRF1010NPBF Datasheet - Kersemi Electronic Co., Ltd.

IRF1010NPBF Datasheet PDF Kersemi Electronic Co., Ltd.

Part Name
IRF1010NPBF

Other PDF
  not available.

page
8 Pages

File Size
3 MB

MFG CO.
KERSEMI
Kersemi Electronic Co., Ltd. KERSEMI

Description
Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free

Page Link's: 1  2  3  4  5  6  7  8 

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