VDSS = 55V
RDS(on) = 5.3mâ¦
ID = 169A
Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Benefits
â Advanced Process Technology
â Ultra Low On-Resistance
â Dynamic dv/dt Rating
â 175°C Operating Temperature
â Fast Switching
â Repetitive Avalanche Allowed up to Tjmax
Typical Applications
â Electric Power Steering (EPS)
â Anti-lock Braking System (ABS)
â Wiper Control
â Climate Control
â Power Door
â Lead-Free
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