DESCRIPTION
The Nell IRF730 are N-Channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
FEATURES
â RDS(ON) = 1.00⦠@ VGS = 10V
â Ultra low gate charge(22nC Max.)
â Low reverse transfer capacitance
(CRSS = 4pF typical)
â Fast switching capability
â 100% avalanche energy specified
â Improved dv/dt capability
â 150°C operation temperature
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