N-Channel Enhancement Mode
Features
⢠International standard packages
⢠Low RDS (on) HDMOSTM process
⢠Rugged polysilicon gate cell structure
⢠Low package inductance (< 5 nH)
- easy to drive and to protect
⢠Fast switching times
Applications
⢠Switch-mode and resonant-mode power supplies
⢠Motor controls
⢠Uninterruptible Power Supplies (UPS)
⢠DC choppers
Advantages
⢠Easy to mount with 1 screw (isolated mounting screw hole)
⢠Space savings
⢠High power density
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