Description
The IRL6283MTRPbF combines the latest HEXFET® N-Channel Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Features and Benefits
•Environmentally Friendly Product
•RoHs compliant containing no Lead, no Bromide
   and no Halogen
•Very Low RDS(on)

Applications
•ORing, eFuse, and high current
   load switch
•Load switch for battery
   application
•Inverter switches for DC motor
   application