VDSS = 200V
RDS(on) = 0.40â¦
ID = 6.2A
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
â Isolated Package
â High Voltage Isolation = 2.5KVRMS
â Sink to Lead Creepage Dist. 4.8mm
â Logic-Level Gate Drive
â RDS(ON) Specified at VGS = 4V & 5V
â Fast Switching
â Ease of paralleling
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