[TELEFUNKEN electronic]
Construction : Emitter: GaAs IR Emitting Diode
Detector: Silicon NPN Epitaxial Planar Phototransistor
Applications: Gaivanically separated circuits, non-interaction switches
Features:
â DC isolation test voltage Vis 4.4 kV
â Low coupling capacity CK typ. 0.3 pF
â Test class 25/100.21, DIN 40045
â Current transfer ratio in groups selected
â Low temperature coefficient of CTR
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