GENERAL DESCRIPTION
The K4S160822D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
FEATURES
⢠JEDEC standard 3.3V power supply
⢠LVTTL compatible with multiplexed address
⢠Dual banks operation
⢠MRS cycle with address key programs
-. CAS latency ( 2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
⢠All inputs are sampled at the positive going edge of the system clock
⢠Burst read single-bit write operation
⢠DQM for masking
⢠Auto & self refresh
⢠15.6us refresh duty cycle(2K/32ms)
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