This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltageâblocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. This new Eâseries introduces an Energyâefficient, ESD protected, and short circuit rugged device.
⢠Industry Standard TOâ220 Package
⢠High Speed: Eoff = 60 J/A typical at 125°C
⢠High Voltage Short Circuit Capability â 10 s minimum at 125°C, 400 V
⢠Low OnâVoltage 2.0 V typical at 10 A, 125°C
⢠Robust High Voltage Termination
⢠ESD Protection GateâEmitter Zener Diodes
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