FEATURES
⢠HIGH DC CURRENT GAIN
HFE = 1000 Min @ IC = 25A
HFE = 400 Min 0@ IC = 50A
⢠CURVES TO 100A (Pulsed)
⢠DIODE PROTECTION TO RATED IC
⢠MONOLITHIC CONSTRUCTION WITH
BUILT-IN BASE â EMITTER SHUNT RESISTOR
⢠JUNCTION TEMPERATURE TO +200°C
APPLICATIONS
For use as output devices in complementary
general purpose amplifier applications.
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