DESCRIPTION
The NX25F011B, NX25F021B, and NX25F041B Serial Flash memories provide a storage solution for systems limited in power, pins, space, hardware, and firmware resources. They are ideal for applications that store voice, text, and data in a portable or mobile environment. Using NexFlashs patented single transistor EEPROM cell, the devices offer a high-density, low-voltage, low-power, and cost-effective non-volatile memory solution. The devices operate on a single 5V or 3V (2.7V-3.6V) supply for Read and Erase/Write with typical current consumption as low as 2.5 mA active and less than 1 µA standby. Sector erase/write speeds as fast as 7.5 ms increase system performance, minimize power-on time, and maximize battery life.
FEATURES
⢠Flash Storage for Resource-Limited Systems
  â Ideal for portable/mobile and microcontroller-based applications that store voice, text, and data
⢠0.35µ NexFlashMemory Technology
  â 1M/2M/4M-bit with 512/1024/2048 sectors
  â Small 264-byte sectors
  â Erase/Write time of 7.5 ms/sector (typical)
  â Optional 8KB (32 sector) block erase for faster programming
⢠Ultra-low Power for Battery-Operation
  â Single 5V or 3V supply for read and erase/write
  â 1 mA standby current, 2.5 mA active @ 3V (typical)
  â Low frequency read command for lower power
⢠4-pin SPI Serial Interface
  â Easily interfaces to popular microcontrollers
  â Clock operation as fast as 20 MHz
⢠On-chip Serial SRAM
  â Single 264-byte Read/Write SRAM buffer
  â Use in conjunction with or independent of Flash
  â Off-loads RAM-limited microcontrollers
⢠Special Features for Media-Storage Applications
  â Byte-level addressing for reads and SRAM writes
  â Transfer or compare sector to SRAM
  â Versatile hardware and software write-protection
  â In-system electronic part number option
  â Removable Serial Flash Module package option
  â Serial Flash Development Kit
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