FEATURE
a) Adopting new 5th generation IGBT (CSTBT TM) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.55V @Tj=125°C
b) Over-temperature protection by detecting Tj of the CSTBT TM chips and error output is possible from all each conservation upper and lower arm of IPM.
c) New small package
Reduce the package size by 10%, thickness by 22% from S-DASH series.
• 2φ 75A, 600V Current-sense IGBT type inverter
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short circuit, over-temperature & under-voltage (P-Fo available from upper arm devices)
• UL Recognized Yellow Card No.E80276(N)
File No.E80271
APPLICATION
Photo voltaic power conditioner
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