MFG CO.
Intersil
These are P-Channel enhancement mode silicon gate power field effect transistors designed for high speed applications such as switching regulators, switching convertors, relay drivers, and drivers for high power bipolar switching transistors.
Formerly developmental type TA09046.
Features
• -6A, -80V and -100V
• rDS(ON) = 0.600â¦
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Part Name
Description
PDF
MFG CO.
6A, 100V, 0.600 Ohm, P-Channel Power MOSFET
Fairchild Semiconductor
-8A, -80V AND -100V, 0.400 Ohm, P-CHANNEL POWER MOSFETS
Harris Semiconductor
1 A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs
New Jersey Semiconductor
12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs
Harris Semiconductor
1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs
New Jersey Semiconductor
-0.6A and -0.7A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs
Harris Semiconductor
-25A, -100V and -80V, 0.150Ohm, P-Channel Power MOSFETs
New Jersey Semiconductor
25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs ( Rev : V2 )
New Jersey Semiconductor
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs ( Rev : 1999 )
Fairchild Semiconductor
25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs
New Jersey Semiconductor