DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.
â TYPICAL RDS(on) = 0.07 â¦
â AVALANCHE RUGGED TECHNOLOGY
â LOW GATE CHARGE
â HIGH CURRENT CAPABILITY
â 175°C OPERATING TEMPERATURE
â LOW THRESHOLD DRIVE
â ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL
APPLICATIONS
â HIGH CURRENT, HIGH SPEED SWITCHING
â SOLENOID AND RELAY DRIVERS
â DC-DC & DC-AC CONVERTERS
â AUTOMOTIVE ENVIRONMENT
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