N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
â TYPICAL RDS(on) = 0.065 â¦
â AVALANCHE RUGGED TECHNOLOGY
â 100% AVALANCHE TESTED
â REPETITIVE AVALANCHE DATA AT 100oC
â LOW GATE CHARGE
â LOGIC LEVEL COMPATIBLE INPUT
â 175oC OPERATING TEMPERATURE
â APPLICATION ORIENTED CHARACTERIZATION
â THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX â-1â)
â SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX âT4â)
APPLICATIONS
â HIGH CURRENT, HIGH SPEED SWITCHING
â SOLENOID AND RELAY DRIVERS
â REGULATORS
â DC-DC & DC-AC CONVERTERS
â MOTOR CONTROL, AUDIO AMPLIFIERS
â AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
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