N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

■ TYPICAL RDS(on)= 0.12Ω
■ HIGH CURRENT POWER MODULE
■ AVALANCHE RUGGED TECHNOLOGY
■ VERY LARGE SOA - LARGE PEAK POWER CAPABILITY
■ EASY TO MOUNT
■ SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS
■ EXTREMELY LOW Rth (Junction to case)
■ VERY LOW INTERNAL PARASITIC INDUCTANCE
■ ISOLATED PACKAGE UL RECOGNIZED

APPLICATIONS
■ SMPS & UPS
■ MOTOR CONTROL
■ WELDING EQUIPMENT
■ OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS