N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
â TYPICAL RDS(on) = 5 â¦
â AVALANCHE RUGGED TECHNOLOGY
â 100% AVALANCHE TESTED
â REPETITIVE AVALANCHE DATA AT 100°C
â LOW INPUT CAPACITANCE
â LOW GATE CHARGE
â APPLICATION ORIENTED CHARACTERIZATION
APPLICATIONS
â HIGH CURRENT, HIGH SPEED SWITCHING
â SWITCH MODE POWER SUPPLIES (SMPS)
â CONSUMER AND INDUSTRIAL LIGHTING
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