DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Sizeï” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.
â TYPICAL RDS(on) = 0.035 â¦
â 100% AVALANCHE TESTED
â LOW GATE CHARGE
â APPLICATION ORIENTED CHARACTERIZATION
APPLICATIONS
â DC MOTOR CONTROL
â DC-DC & DC-AC CONVERTERS
â SYNCHRONOUS RECTIFICATION
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