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TEA1610T Datasheet - NXP Semiconductors.

TEA1610T Datasheet PDF NXP Semiconductors.

Part Name
TEA1610T

Other PDF
  not available.

page
21 Pages

File Size
86.1 kB

MFG CO.
NXP
NXP Semiconductors. NXP

General description
The TEA1610 is a monolithic integrated circuit implemented in a high-voltage Diffusion Metal Oxide Semiconductor (DMOS) process. The circuit is a high voltage controller for a zero-voltage switching resonant converter. The IC provides the drive function for two discrete power MOSFETs in a half-bridge configuration. It also includes a level-shift circuit, an oscillator with accurately-programmable frequency range, a latched shut-down function and a transconductance error amplifier.
To guarantee an accurate 50 % switching duty factor, the oscillator signal passes through a divide-by-two flip-flop before being fed to the output drivers.
The circuit is very flexible and enables a broad range of applications for different mains voltages.

Features
■ Integrated high voltage level-shift function
■ Integrated high voltage bootstrap diode
■ Low start-up current (green function)
■ Adjustable dead time
■ Transconductance error amplifier for ultra high-ohmic regulation feedback
■ Latched shut-down circuit for overcurrent and overvoltage protection
■ Adjustable minimum and maximum frequencies
■ Undervoltage lockout

Applications
■ TV and monitor power supplies
■ High voltage power supplies

 

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

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