DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

UPC2747T Datasheet - NEC => Renesas Technology

UPC2747T Datasheet PDF NEC => Renesas Technology

Part Name
UPC2747T

Other PDF
  not available.

page
5 Pages

File Size
53.6 kB

MFG CO.
NEC
NEC => Renesas Technology NEC

DESCRIPTION
The UPC2747T is a Silicon Monolithic integrated circuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz.
This amplifier was designed for 900 MHz receivers in cellular and cordless telephone applications. Operating on a 3 volt supply (1.8 volt minimum) this IC is ideally suited for handheld, portable designs.

FEATURES
• LOW VOLTAGE - LOW CURRENT: 5 mA at 3 V
• LOW POWER CONSUMPTION: 15 mW TYP
• SUPER SMALL PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE

Page Link's: 1  2  3  4  5 

Part Name
Description
PDF
MFG CO.
3 V, SUPER MINIMOLD 900 MHz Si MMIC AMPLIFIER
California Eastern Laboratories.
3 V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER
California Eastern Laboratories.
3 V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER
California Eastern Laboratories.
900 MHz PAGING POWER AMPLIFIER Si MONOLITHIC INTEGRATED CIRCUIT
Motorola => Freescale
3.5 V GSM 900 MHz Power Amplifier
Ericsson
900 MHz Power Amplifier
Conexant Systems
3 V, SUPER MINIMOLD 1900 MHz SI RFIC AMPLIFIER
California Eastern Laboratories.
3 V, SUPER MINIMOLD SI MMIC DOWNCONVERTER
California Eastern Laboratories.
800 - 900 MHz LOW NOISE AMPLIFIER
IC MICROSYSTEMS
3 V SUPER MINIMOLD L-BAND SI MMIC DOWNCONVERTER
California Eastern Laboratories.

Share Link: 

All Rights Reserved© datasheetq.com  [Privacy Policy ] [ Request Datasheet] [Contact Us]