Description
The V54C365164VC is a four bank Synchronous DRAM organized as 4 banks x 1Mbit x 16. The V54C365164VC achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock All of the control, address, data input and output circuits are synchronized with the positive edge of an externally supplied clock.
Features
â 4 banks x 1Mbit x 16 organization
â High speed data transfer rates up to 166 MHz
â Full Synchronous Dynamic RAM, with all signals referenced to clock rising edge
â Single Pulsed RAS Interface
â Data Mask for byte Control
â Four Banks controlled by BA0 & BA1
â Programmable CAS Latency: 1, 2, & 3
â Programmable Wrap Sequence: Sequential or Interleave
â Programmable Burst Length: 1, 2, 4, 8 and full page for Sequential Type 1, 2, 4, 8 for Interleave Type
â Multiple Burst Read with Single Write Operation
â Automatic and Controlled Precharge Command
â Random Column Address every CLK (1-N Rule)
â Suspend Mode and Power Down Mode
â Auto Refresh and Self Refresh
â Refresh Interval: 4096 cycles/64 ms
â Available in 54 Pin 400 mil TSOP-II
â LVTTL Interface
â Single +3.3 V ±0.3 V Power Supply
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