LTC4213IDDB 查看數據表（PDF） - Linear Technology
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LTC4213IDDB Datasheet PDF : 20 Pages
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LTC4213
ELECTRICAL CHARACTERISTICS The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = 5V, ISEL = 0 unless otherwise noted. (Note 2)
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNITS
∆VGSMAX – ∆VGSARM Difference Between ∆VGSMAX and VSENSEN = 0, VCC ≥ 2.97V
● 0.3
1.1
V
∆VGSARM
VSENSEN = 0, VCC = 2.3V
● 0.15
0.8
V
VREADY(OL)
READY Pin Output Low Voltage
IREADY = 1.6mA, Pull Down Device On
●
0.2
0.4
V
IREADY(LEAK)
READY Pin Leakage Current
VREADY = 5V, Pull Down Device Off
●
0
±1
µA
VON(TH)
ON Pin High Threshold
ON Rising, GATE Pulls Up
● 0.76
0.8
0.84
V
∆VON(HYST)
ON Pin Hysteresis
ON Falling, GATE Pulls Down
10
40
90
mV
VON(RST)
ON Pin Reset Threshold
ON Falling, Fault Reset, GATE Pull Down
● 0.36
0.4
0.44
V
ION(IN)
ON Pin Input Current
VON = 1.2V
●
0
±1
µA
∆VOV
Overvoltage Threshold
∆VOV = VSENSEP – VCC
● 0.41
0.7
1.1
V
tOV
Overvoltage Protection Trip Time VSENSEP = VSENSEN = Step 5V to 6.2V
25
65
160
µs
tFAULT(SLOW)
VCB Trips to GATE Discharging
∆VSENSE Step 0mV to 50mV,
VSENSEN Falling, VCC = VSENSEP = 5V
●7
16
27
µs
tFAULT(FAST)
VCB(FAST) Trips to GATE Discharging ∆VSENSE Step 0V to 0.3V, VSENSEN Falling, ●
VSENSEP = 5V
1
2.5
µs
tDEBOUNCE
Startup De-Bounce Time
VON = 0V to 2V Step to Gate Rising,
(Exiting Reset Mode)
27
60
130
µs
tREADY
tOFF
tON
READY Delay Time
Turn-Off Time
Turn-On Time
VGATE = 0V to 8V Step to READY Rising,
VSENSEP = VSENSEN = 0
22
50
115
µs
VON = 2V to 0.6V Step to GATE Discharging
1.5
5
10
µs
VON = 0.6V to 2V Step to GATE Rising,
(Normal Mode)
4
8
16
µs
tRESET
Reset Time
VON Step 2V to 0V
20
80
150
µs
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: All currents into device pins are positive; all currents out of device
pins are negative. All voltages are referenced to ground unless otherwise
specified.
4213f
3
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