STB5N62K3 查看數據表（PDF） - STMicroelectronics

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STB5N62K3

N-channel 620 V, 1.28 Ω, 4.2 A SuperMESH3™ Power MOSFET D²PAK, DPAK,TO-220FP, TO-220 and IPAK

STMicroelectronics 

STB5N62K3, STD5N62K3, STF5N62K3

STP5N62K3, STU5N62K3

N-channel 620 V, 1.28 Ω, 4.2 A SuperMESH3™ Power MOSFET

D²PAK, DPAK,TO-220FP, TO-220 and IPAK

Features

Order codes VDSS

STB5N62K3

STD5N62K3

STF5N62K3

STP5N62K3

STU5N62K3

620 V

RDS(on)

max.

< 1.6 Ω

ID

Pw

70 W

4.2 A 25 W

70 W

■ 100% avalanche tested

■ Extremely large avalanche performance

■ Gate charge minimized

■ Very low intrinsic capacitance

■ Improved diode reverse recovery

characteristics

■ Zener-protected

Application

Switching applications

3

2

1

TO-220

3

1

DPAK

3

2

1

TO-220FP

3

1

D²PAK

3

2

1

IPAK

Figure 1. Internal schematic diagram

D(2)

Description

These devices are made using the

SuperMESH3™ Power MOSFET technology that

is obtained via improvements applied to

STMicroelectronics’ SuperMESH™ technology

combined with a new optimized vertical structure.

The resulting product has an extremely low on

resistance, superior dynamic performance and

high avalanche capability, making it especially

suitable for the most demanding applications.

Table 1. Device summary

Order codes

Marking

STB5N62K3

STD5N62K3

STF5N62K3

STP5N62K3

STU5N62K3

5N62K3

G(1)

Packages

D²PAK

DPAK

TO-220FP

TO-220

IPAK

S(3)

AM01476v1

Packaging

Tape and reel

Tape and reel

Tube

Tube

Tube

October 2010

Doc ID 17361 Rev 2

1/19

www.st.com

19

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