STFU10N80K5 查看數據表（PDF） - STMicroelectronics

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STFU10N80K5

N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFETs in a TO-220FP and TO-220FP ultra narrow leads

STMicroelectronics 

Electrical characteristics

STF10N80K5, STFU10N80K5

2

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 4: On/off-state

Symbol

Parameter

Test conditions

V(BR)DSS

IDSS

IGSS

VGS(th)

RDS(on)

Drain-source breakdown voltage

Zero gate voltage drain current

Gate body leakage current

Gate threshold voltage

Static drain-source on-resistance

VGS = 0 V, ID = 1 mA

VGS = 0 V, VDS = 800 V

VGS = 0 V, VDS = 800 V

TC = 125 °C (1)

VDS = 0 V, VGS = ±20 V

VDS = VGS, ID = 100 µA

VGS = 10 V, ID = 4.5 A

Min.

800

3

Typ.

4

0.470

Max.

1

50

±10

5

0.600

Unit

V

µA

µA

µA

V

Ω

Notes:

(1)Defined by design, no subject to production test.

Symbol

Parameter

Ciss

Coss

Crss

Co(tr)(1)

Co(er)(2)

Rg

Qg

Qgs

Input capacitance

Output capacitance

Reverse transfer

capacitance

Equivalent capacitance

time related

Equivalent capacitance

energy related

Intrinsic gate resistance

Total gate charge

Gate-source charge

Qgd Gate-drain charge

Table 5: Dynamic

Test conditions

VDS = 100 V, f = 1 MHz,

VGS = 0 V

VDS = 0 to 640 V, VGS = 0 V

f = 1 MHz , ID = 0 A

VDD = 640 V, ID = 9 A

VGS = 10 V

See Figure 16: "Test circuit for

gate charge behavior"

Min. Typ. Max. Unit

- 635 - pF

-

53

-

pF

- 0.8 - pF

-

85

-

pF

34

-

pF

-

6

-

Ω

-

22

-

nC

- 5.5 - nC

- 13.2 - nC

Notes:

(1)Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

(2)Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when

VDS increases from 0 to 80% VDSS.

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DocID026564 Rev 5

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