PA2806 - MOS FIELD EFFECT TRANSISTOR - Renesas 数据手册 ( 数据表 )

Description
The μ PA2806 is N-channel MOSFET designed for DC/DC converter and power management applications.

FEATUREs
• Low on-state resistance
   ⎯ RDS(on)1 = 57 mΩ MAX. (VGS = 10 V, ID = 10 A)
   ⎯ RDS(on)2 = 70 mΩ MAX. (VGS = 8 V, ID = 10 A)
• Low Ciss: Ciss = 780 pF TYP. (VDS = 10 V, VGS = 0 V, f = 1 MHz)
• Built-in gate protection diode
• Thin type surface mount package with heat spreader (8-pin HVSON)
• RoHS Compliant