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TS925AI(2011) View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
TS925AI Datasheet PDF : 18 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
TS925
2
Electrical characteristics
Electrical characteristics
Table 3.
Symbol
Electrical characteristics for VCC = 3 V with VDD = 0 V, Vicm = VCC/2,
RL connected to VCC/2, Tamb = 25° C
(unless otherwise specified)
Parameter
Conditions
Min. Typ. Max. Unit
DC performance
Vio Input offset voltage
At Tamb = +25°C
TS925
TS925A
At Tmin. Tamb Tmax:
TS925
TS925A
DVio
Iio
Iib
CMR
VOH
VOL
Avd
SVR
Io
ICC
Istby
Input offset voltage drift
Input offset current
Vout = 1.5V
Input bias current
Vout = 2.5V
Common mode rejection
Vicm from 0 to 3 V
60
ratio
Tmin Tamb Tmax
RL = 10kΩ
2.90
High level output voltage
RL = 600Ω
2.87
RL = 32Ω
Low level output voltage
RL = 10kΩ
RL = 600Ω
RL = 32Ω
Large signal voltage gain
Vout = 2Vpk-pk
RL = 10kΩ
RL = 600Ω
RL = 32Ω
Supply voltage rejection ratio Vcc = 2.7 to 3.3V
60
Output short-circuit current
50
Total supply current
Total supply current in
STANDBY
No load, Vout = Vcc/2
Pin 9 connected to Vcc-
Venstby
Pin 9 voltage to enable the
STANDBY mode (1)
at Tamb = +25°C
at Tmin Tamb Tmax
Vdistby
Pin 9 voltage to disable the
STANDBY mode(1)
at Tamb = +25°C
at Tmin Tamb Tmax
1.1
1
AC performance
2
1
15
80
2.63
180
200
35
16
85
80
5
6
GBP Gain bandwidth product
SR Slew rate
RL = 600Ω
4
0.7 1.3
Pm Phase margin at unit gain RL = 600Ω, CL =100pF
68
mV
3
0.9
5
1.8
μV/°C
30 nA
100 nA
dB
V
50 mV
100
V/mV
dB
mA
7
mA
μA
0.3
0.4
V
V
MHz
V/μs
Degrees
Doc ID 4949 Rev 4
3/18

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