ST62P10LM3/SWD View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
ST62P10LM3/SWD
STMicroelectronics
ST62P10LM3/SWD Datasheet PDF : 105 Pages
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ST6208C/ST6209C/ST6210C/ST6220C
11.7 EMC CHARACTERISTICS
Susceptibility tests are performed on a sample ba-
sis during product characterization.
11.7.1 Functional EMS
(Electro Magnetic Susceptibility)
Based on a simple running application on the
product (toggling 2 LEDs through I/O ports), the
product is stressed by two electro magnetic events
until a failure occurs (indicated by the LEDs).
s ESD: Electro-Static Discharge (positive and
negative) is applied on all pins of the device until
a functional disturbance occurs. This test
conforms with the IEC 1000-4-2 standard.
s FTB: A Burst of Fast Transient voltage (positive
and negative) is applied to VDD and VSS through
a 100pF capacitor, until a functional disturbance
occurs. This test conforms with the IEC 1000-4-
4 standard.
A device reset allows normal operations to be re-
sumed.
Symbol
VFESD
VFFTB
Parameter
Condition s
Voltage limits to be applied on any I/O pin VDD=5V, TA=+25°C, fOSC=8MHz
to induce a functional disturbance
conforms to IEC 1000-4-2
Fast transient voltage burst limits to be ap-
plied through 100pF on VDD and VDD pins
to induce a functional disturbance
VDD=5V, TA=+25°C, fOSC=8MHz
conforms to IEC 1000-4-4
Neg 1) Pos 1)
-2
2
-2.5
3
Unit
kV
Notes:
1. Data based on characterization results, not tested in production.
2. The suggested 10nF and 0.1µF decoupling capacitors on the power supply lines are proposed as a good price vs. EMC
performance tradeoff. They have to be put as close as possible to the device power supply pins. Other EMC recom-
mendations are given in other sections (I/Os, RESET, OSCx pin characteristics).
Figure 56. EMC Recommended star network power supply connection 2)
POWER
SUPPLY
SOURCE
VDD
10nF 0.1µF
ST6
DIGITAL NOISE
FILTERING
(close to the MCU)
VDD
VSS
ST62XX
77/105
1
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