DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

GS832218C-200 View Datasheet(PDF) - Giga Semiconductor

Part Name
Description
Manufacturer
GS832218C-200 Datasheet PDF : 44 Pages
First Prev 21 22 23 24 25 26 27 28 29 30 Next Last
Product Preview
GS832218(B/C)/GS832236(B/C)/GS832272(C)
AC Test Conditions
Parameter
Conditions
Input high level
2.3 V
Input low level
0.2 V
Input slew rate
1 V/ns
Input reference level
1.25 V
Output reference level
1.25 V
Output load
Fig. 1& 2
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig.
1 unless otherwise noted.
3. Output Load 2 for tLZ, tHZ, tOLZ and tOHZ
4. Device is deselected as defined by the Truth Table.
Output Load 1
DQ
Output Load 2
2.5 V
50
30pF*
DQ
225
VT = 1.25 V
* Distributed Test Jig Capacitance
5pF* 225
DC Electrical Characteristics
Parameter
Input Leakage Current
(except mode pins)
ZZ and PE Input Current
FT, SCD, ZQ Input Current
Output Leakage Current
Output High Voltage
Output High Voltage
Output Low Voltage
Symbol
IIL
IIN1
IIN2
IOL
VOH2
VOH3
VOL
Test Conditions
VIN = 0 to VDD
VDD VIN VIH
0 V VIN VIH
VDD VIN VIL
0 V VIN VIL
Output Disable, VOUT = 0 to VDD
IOH = 8 mA, VDDQ = 2.375 V
IOH = 8 mA, VDDQ = 3.135 V
IOL = 8 mA
Min
1 uA
1 uA
1 uA
100 uA
1 uA
1 uA
1.7 V
2.4 V
Max
1 uA
1 uA
100 uA
1 uA
1 uA
1 uA
0.4 V
Rev: 1.00 10/2001
21/44
© 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]