BUV50 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

BUV50

HIGH POWER NPN SILICON TRANSISTOR

STMicroelectronics 

BUV50

HIGH POWER NPN SILICON TRANSISTOR

s SGS-THOMSON PREFERRED SALESTYPE

s NPN TRANSISTOR

s HIGH CURRENT CAPABILITY

s FAST SWITCHING SPEED

s FULLY CHARACTERISED AT 125oC

APPLICATION

s SWITCHING REGULATORS

s MOTOR CONTROL

DESCRIPTION

The BUV50 is a Multiepitaxial planar NPN

transistor in TO-3 metal case.

It’s intented for use in high frequency and

efficiency converters such us motor controllers

and industrial equipment.

1

2

TO-3

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

VCEV

VCEO

V EBO

IC

ICM

IB

IBM

P Ba s e

Ptot

Tstg

Tj

Parameter

Collector-Emitter Voltage (VBE = -1.5V)

Collector-Emitter Voltage (IB = 0)

Emitt er-Base Voltage (IC = 0)

Collector Current

Collector Peak Current

Base Current

Base Peak Current

Reverse Bias Base Power Dissipation

(B.E. junction in avalance)

Tot al Power Dissipation at Tcase ≤ 25 oC

Storage T emperature

Max Operating Junction Temperature

April 1997

Value

250

125

7

25

50

6

12

2

150

-65 to 200

150

Unit

V

V

V

A

A

A

A

W

W

oC

oC

1/5

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