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STM32F103ZEH7 View Datasheet(PDF) - STMicroelectronics

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STM32F103ZEH7 Datasheet PDF : 123 Pages
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STM32F103xC, STM32F103xD, STM32F103xE
Electrical characteristics
Low-speed internal (LSI) RC oscillator
Table 26. LSI oscillator characteristics (1)
Symbol
Parameter
Min
fLSI(2)
Frequency
30
tsu(LSI)(3) LSI oscillator startup time
IDD(LSI)(3) LSI oscillator power consumption
1. VDD = 3 V, TA = –40 to 105 °C unless otherwise specified.
2. Based on characterization, not tested in production.
3. Guaranteed by design, not tested in production.
Typ
40
0.65
Max
Unit
60
kHz
85
µs
1.2
µA
Wakeup time from low-power mode
The wakeup times given in Table 27 is measured on a wakeup phase with a 8-MHz HSI RC
oscillator. The clock source used to wake up the device depends from the current operating
mode:
Stop or Standby mode: the clock source is the RC oscillator
Sleep mode: the clock source is the clock that was set before entering Sleep mode.
All timings are derived from tests performed under ambient temperature and VDD supply
voltage conditions summarized in Table 10.
Table 27. Low-power mode wakeup timings
Symbol
Parameter
Typ
Unit
tWUSLEEP(1) Wakeup from Sleep mode
1.8
µs
tWUSTOP(1)
Wakeup from Stop mode (regulator in run mode)
Wakeup from Stop mode (regulator in low power mode)
3.6
µs
5.4
tWUSTDBY(1) Wakeup from Standby mode
50
µs
1. The wakeup times are measured from the wakeup event to the point in which the user application code
reads the first instruction.
Doc ID 14611 Rev 7
59/123

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