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STM32F103RCT6 View Datasheet(PDF) - STMicroelectronics

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Description
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STM32F103RCT6 Datasheet PDF : 123 Pages
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Electrical characteristics
STM32F103xC, STM32F103xD, STM32F103xE
5.3.8
5.3.9
PLL characteristics
The parameters given in Table 28 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 10.
Table 28. PLL characteristics
Symbol
Parameter
Value
Min
Typ
Max(1)
Unit
fPLL_IN
PLL input clock(2)
PLL input clock duty cycle
1
8.0
40
25
MHz
60
%
fPLL_OUT
PLL multiplier output clock
16
tLOCK
PLL lock time
Jitter
Cycle-to-cycle jitter
72
MHz
200
µs
300
ps
1. Based on characterization, not tested in production.
2. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with
the range defined by fPLL_OUT.
Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 105 °C unless otherwise specified.
Table 29. Flash memory characteristics
Symbol
Parameter
Conditions
Min
tprog 16-bit programming time TA–40 to +105 °C
40
tERASE Page (2 KB) erase time TA –40 to +105 °C
20
tME Mass erase time
TA –40 to +105 °C
20
Read mode
fHCLK = 72 MHz with 2 wait
states, VDD = 3.3 V
IDD Supply current
Write mode
fHCLK = 72 MHz, VDD = 3.3 V
Erase mode
fHCLK = 72 MHz, VDD = 3.3 V
Power-down mode / Halt,
VDD = 3.0 to 3.6 V
Vprog Programming voltage
2
1. Guaranteed by design, not tested in production.
Typ Max(1) Unit
52.5 70
µs
40 ms
40 ms
28 mA
7
mA
5
mA
50 µA
3.6
V
60/123
Doc ID 14611 Rev 7

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