STM32F103xC, STM32F103xD, STM32F103xE
Electrical characteristics
Table 36. Synchronous multiplexed PSRAM write timings(1)(2)
Symbol
Parameter
Min
Max Unit
tw(CLK)
FSMC_CLK period
27.7
ns
td(CLKL-NExL)
FSMC_CLK low to FSMC_Nex low (x = 0...2)
2
ns
td(CLKH-NExH)
FSMC_CLK high to FSMC_NEx high (x = 0...2)
THCLK + 2
ns
td(CLKL-NADVL) FSMC_CLK low to FSMC_NADV low
4
ns
td(CLKL-NADVH) FSMC_CLK low to FSMC_NADV high
5
ns
td(CLKL-AV)
FSMC_CLK low to FSMC_Ax valid (x = 16...25)
0
ns
td(CLKH-AIV)
FSMC_CLK high to FSMC_Ax invalid (x = 16...25) TCK + 2
ns
td(CLKL-NWEL)
FSMC_CLK low to FSMC_NWE low
1
ns
td(CLKH-NWEH) FSMC_CLK high to FSMC_NWE high
THCLK +1
ns
td(CLKL-ADV)
FSMC_CLK low to FSMC_AD[15:0] valid
12
ns
td(CLKL-ADIV)
FSMC_CLK low to FSMC_AD[15:0] invalid
3
ns
td(CLKL-Data)
FSMC_A/D[15:0] valid after FSMC_CLK low
6
ns
tsu(NWAITV-CLKH) FSMC_NWAIT valid before FSMC_CLK high
7
ns
th(CLKH-NWAITV) FSMC_NWAIT valid after FSMC_CLK high
2
ns
td(CLKL-NBLH)
FSMC_CLK low to FSMC_NBL high
1
ns
1. CL = 15 pF.
2. Based on characterization, not tested in production.
Doc ID 14611 Rev 7
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